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dc.contributor.authorLow, Tony
dc.contributor.authorEngel, Michael
dc.contributor.authorSteiner, Mathias
dc.contributor.authorAvouris, Phaedon
dc.date.accessioned2018-05-10T13:36:36Z
dc.date.available2018-05-10T13:36:36Z
dc.date.issued2014-08-29
dc.identifierhttp://dx.doi.org/10.1103/PhysRevB.90.081408
dc.identifier.issn0959-6526 / 1879-1786
dc.identifier.urihttp://hdl.handle.net/10438/23408
dc.descriptionConteúdo online de acesso restrito pelo editorpor
dc.description.abstractWe study the origin of a photocurrent generated in doped multilayer black phosphorus (BP) phototransistors, and find that it is dominated by thermally driven thermoelectric and bolometric processes. The experimentally observed photocurrent polarities are consistent with photothermal processes. The photothermoelectric current can be generated up to a micrometer away from the contacts, indicating a long thermal decay length. With an applied source-drain bias, a photobolometric current is generated across the whole device, overwhelming the photothermoelectric contribution at a moderate bias. The photoresponsivity in the multilayer BP device is two orders of magnitude larger than that observed in graphene.eng
dc.language.isoeng
dc.publisherAmer Physical Soceng
dc.relation.ispartofseriesPhysical review beng
dc.sourceWeb of Science
dc.subjectField-effect transistorseng
dc.subjectThermal-conductivityeng
dc.subjectGrapheneeng
dc.subjectPhotocurrenteng
dc.subjectCrystalseng
dc.subjectMobilityeng
dc.titleOrigin of photoresponse in black phosphorus phototransistorseng
dc.typeArticle (Journal/Review)eng
dc.subject.areaMatemáticapor
dc.subject.bibliodataCondutividade térmicapor
dc.subject.bibliodataGrafenopor
dc.contributor.affiliationFGV
dc.identifier.doi10.1103/PhysRevB.90.081408
dc.rights.accessRightsrestrictedAccesseng
dc.identifier.WoS000341027200002


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